There are described the quasi-chemical reactions that take place between radiation defects and impurities in irradiated silicon. It has been
experimentally investigated single-crystalline n- and p-type silicon doped, respectively, with phosphorus or boron, irradiated with highenergy electrons or protons and subjected to the high-temperature isochronous annealing. Rates of quasi-chemical reactions are found to be
dependent on the charge-states of reactants and then controllable by varying the irradiation conditions – beam-intensity, irradiation
temperature and IR light exposure during the irradiation, as well as temperature of annealing of the previously irradiated samples. It is
shown that the quasi-chemical reactions can serve as effective tools for tuning the electronic properties of silicon, the basic material of
micro- and nanoelectronics.
Key words: radiation defects in crystals, quasi-chemical reactions, silicon
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