Abstract

The effect of nanometer size disordered regions in SixGe1–x and InPxAs1–x semiconductor alloys on the mobility ofcharge carriers has been
investigated. The investigation has shown, that the composition dependence of the mobility appears as a result of contribution of main
processes of current carriers scattering on phonons, ionized impurities and “alloy” disorders in SixGe1–x and InPxAs1–x alloys. We have
calculated the contribution of these scattering processes towards total scattering. Share of contribution of “alloy” disorders into the total
mobility is different for SixGe1–x and InPxAs1–x solid solutions. Unlike SixGe1–x alloys, the “alloy” disorders in InPxAs1–x practically do not
disturb the crystal lattice in a tangible way at temperatures in the range of 4.2 – 300 K because of sublattices of InP and InAs retain certain
individuality in InPxAs1–x alloys.

Key words: Semiconductor Alloys, disorders, charge carriers mobility.