Abstract

The article deals with the modified method of “hot-wall” beam epitaxy for obtaining the strained lead selenide nanolayers over a wide range of growth rates and controlling their thickness. With detection of the two-stage growth of the layers, the layers with high deformations – tangential lattice constants, and hence with high “negative” pressure were formed. Observations of the shift of the optical spectrum in strained layers and the possibility of deep compensation of the concentration of current carriers when doping the layers with impurities with variable valence turned out to be interesting as well. Under high deformations, the texture of a tetragonal phase is formed. There appears a new level in the conduction band and hence additional absorption in the optical spectrum. The given specific features were first discovered in the physics and technology of IV–VI semiconductors, and they open new opportunities of using these semiconductors in IR optoelectronics.

Key words: nanolayers; deformations; dislocations; supercriticality; “negative” pressure.